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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ11020 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 200V (Min.) *High DC Current Gain: hFE= 400(Min.)@IC= 10A *Low Collector Saturation Voltage: VCE (sat)= 1.0V(Max.)@ IC= 5.0A APPLICATIONS *Designed for general purpose amplifiers, low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continunous Collector Current-Peak Base Current-Continunous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE 200 200 5 15 30 0.5 175 175 -65~200 UNIT V V V A A A W PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 0.86 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJ11020 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 200 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 0.1A 2.0 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 0.15A 3.4 V VBE(sat) Base-Emitter Saturation Voltage IC= 15A; IB= 0.15A 3.8 V VBE(on) Base-Emitter On Voltage IC= 10A, VCE= 5V VCE=200V;VBE(off)=1.5V VCE=200V;VBE(off)=1.5V;TC=150 VCE= 100V; IB= 0 2.8 0.5 5.0 1.0 V ICEV Collector Cutoff Current mA ICEO Collector Cutoff Current mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2.0 mA hFE-1 DC Current Gain IC= 10A, VCE= 5V 400 15000 hFE-2 DC Current Gain IC= 15A, VCE= 5V 100 COB Output Capacitance IE= 0, VCB= 10V; ftest= 0.1MHz 400 pF Switching Times td tr ts tf Delay Time Rise Time VCC= 100V; IC= 10A; IB1= 0.1A VBE(off)= 5V Storage Time Fall Time 4.4 10 0.15 1.2 s s s s isc Websitewww.iscsemi.cn |
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